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MITSUBISHI SEMICONDUCTOR
P
MIN RELI
ARY
M63820FP/KP
8-UNIT 500mA DARLINGTON TRANSISTOR-ARRAY WITH CLAMP DIODE
PIN CONFIGURATION
NC IN1 IN2
1 2 3 4 5 6 7 8 9 10 20 19 18 17 16 15 14 13 12 11
DESCRIPTION The M63820FP/KP 8-channel sinkdriver, consists of 16 NPN transistors connected to from eight high current gain driver pairs.
NC O1 O2 O3 O4 OUTPUT O5 O6 O7 O8 COM COMMON
FEATURES G High breakdown voltage (BVCEO 50V) G High-current driving (IC(max) = 500mA) G With clamping diodes G 3V micro computer series compatible input G Wide operating temperature range (Ta = -40 to +85C)
IN3 IN4 INPUT IN5 IN6 IN7 IN8 GND
APPLICATION Output for 3 voltage microcomputer series and interface with high voltage system. Relay and small printer driver, LED, or incandescent display digit driver.
20P2N-A(FP) Package type 20P2E-A(KP)
NC : No connection
CIRCUIT DIAGRAM FUNCTION The M63820FP/KP is transistor-array of high active level eight units type which can do direct drive of 3 voltage microcomputer series. A resistor of 1.05k is connected between the input pin. A clamp diode for inductive load transient suppression is connected for the output pin (collector) and COM pin (pin11). All emitters of the output transistor are connected to GND (pin10). The outputs are capable of driving 500mA and are rated for operation with output voltage up to 50V.
COM OUTPUT 1.05K INPUT
7.2K 3K GND The eight circuits share the COM and GND The diode, indicated with the dotted line, is parasitic, and cannot be used. Unit :
ABSOLUTE MAXIMUM RATINGS
Symbol VCEO IC VI IF VR Pd Topr Tstg Parameter Collector-emitter voltage Collector current
(Unless otherwise noted, Ta = -40 ~ +85C)
Conditions Output, H Current per circuit output, L
Ratings -0.5 ~ +50 500 -0.5 ~ +10 500 50 1.10(GP)/0.68(KP) -40 ~ +85 -55 ~ +125
Unit V mA V mA V W C C Sep. 2001
Input voltage Clamping diode forward current Clamping diode reverse voltage Power dissipation Operating temperature Storage temperature Ta = 25C, when mounted on board
MITSUBISHI SEMICONDUCTOR
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P
MIN RELI
ARY
M63820FP/KP
8-UNIT 500mA DARLINGTON TRANSISTOR-ARRAY WITH CLAMP DIODE
RECOMMENDED OPERATING CONDITIONS
Symbol VO Output voltage
(Unless otherwise noted, Ta = -40 ~ +85C)
Parameter
Limits min 0 0 typ -- -- max 50 400
Unit V
IC
Collector current (Current per 1 circuit when 8 circuits are coming on simultaneously)
Duty Cycle FP : no more than 4% KP : no more than 2% Duty Cycle FP : no more than 15% KP : no more than 6% IC 400mA
mA 0 2.7 0 -- -- -- 200 10 0.6 V V
VIH VIL
"H" input voltage "L" input voltage
ELECTRICAL CHARACTERISTICS
Symbol V (BR) CEO VCE(sat) II VF IR hFE Parameter
(Unless otherwise noted, Ta = 25C)
Test conditions
Limits min 50 -- -- -- -- -- -- 1000 typ -- 1.2 1.0 0.9 1.5 1.4 -- 2500 max -- 1.6 1.3 1.1 2.4 2.0 100 --
Unit V V mA V A --
Collector-emitter breakdown voltage ICEO = 100A II = 500A, IC = 350mA Collector-emitter saturation voltage II = 350A, IC = 200mA II = 250A, IC = 100mA Input current VI = 3V Clamping diode forward volltage IF = 350mA Clamping diode reverse current VR = 50V DC amplification factor VCE = 2V, IC = 350mA
SWITCHING CHARACTERISTICS
Symbol ton toff Parameter Turn-on time Turn-off time
(Unless otherwise noted, Ta = 25C)
Test conditions CL = 15pF (note 1)
Limits min -- -- typ 15 350 max -- --
Unit ns ns
NOTE 1 TEST CIRCUIT
INPUT VO
TIMING DIAGRAM
50%
50%
Measured device OPEN PG 50
RL OUTPUT
INPUT
OUTPUT
CL
50%
50%
ton
(1)Pulse generator (PG) characteristics : PRR=1kHz, tw = 10s, tr = 6ns, tf = 6ns, Zo = 50 VI = 0 ~ 3V (2)Input-output conditions : RL = 25, Vo = 10V (3)Electrostatic capacity CL includes floating capacitance at connections and input capacitance at probes
toff
Sep. 2001


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